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BUK755R2-40B,127
Nexperia USA Inc.RoHS
/
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 75A TO220AB
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Inventory: 5044
Minimum: 1
Total Price: USD $4.73
Unit Price: USD $4.73385
≥1 USD $4.73385
≥10 USD $3.88455
≥100 USD $3.76295
≥500 USD $3.64135
≥1000 USD $3.5207
Technical Details
Physical
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 203W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 203W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.2m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3789pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Rise Time 51ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 56 ns
Turn-Off Delay Time 81 ns
Continuous Drain Current (ID) 143A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain Current-Max (Abs) (ID) 75A
Drain-source On Resistance-Max 0.0052Ohm
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 494 mJ
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
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