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PSMN013-100ES,127
Nexperia USA Inc.RoHS
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Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
PSMN013-100ES - N-channel 100V 13.9m? standard level MOSFET in I2PAK.
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Inventory: 9352
Minimum: 1
Total Price: USD $6.28
Unit Price: USD $6.28425
≥1 USD $6.28425
≥10 USD $5.1566
≥100 USD $4.9951
≥500 USD $4.83455
≥1000 USD $4.67305
Technical Details
Supply Chain
Factory Lead Time 20 Weeks
Physical
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Pin Count 3
Power Dissipation-Max 170W Tc
Element Configuration Single
Power Dissipation 170W
Turn On Delay Time 20.7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13.9m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3195pF @ 50V
Current - Continuous Drain (Id) @ 25°C 68A Tc
Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 52.5 ns
Continuous Drain Current (ID) 68A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain to Source Breakdown Voltage 90V
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
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