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STS12NH3LL

STMicroelectronics
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 12A 8-SOIC
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Inventory: 7038
Minimum: 1
Total Price: USD $0.26
Unit Price: USD $0.26315
≥1 USD $0.26315
≥10 USD $0.21565
≥100 USD $0.209
≥500 USD $0.20235
≥1000 USD $0.1957

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series STripFET?
JESD-609 Code e4
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 10.5mOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 12A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STS12
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 2.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10.5m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 965pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Rise Time 32 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 8.5 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 30V

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 1.25mm
Length 5mm
Width 4mm

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