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STP80NF03L

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 80A TO-220
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Inventory: 3701
Minimum: 1
Total Price: USD $1.11
Unit Price: USD $1.10675
≥1 USD $1.10675
≥10 USD $0.9082
≥100 USD $0.8797
≥500 USD $0.8512
≥1000 USD $0.8227

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature 175°C TJ
Packaging Tube
Series STripFET? II
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 80A
Base Part Number STP80N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 4.5V
Rise Time 270ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 95 ns
Turn-Off Delay Time 1.12 μs
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0065Ohm
Drain to Source Breakdown Voltage 30V

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 9.15mm
Length 10.4mm
Width 4.6mm

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