Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 135mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 30A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STW26N
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 313W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 313W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 135m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 102nC @ 10V
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 26A
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 740 mJ