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STW11NB80
STMicroelectronicsRoHS
/
Package TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 11A TO-247
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Inventory: 6533
Minimum: 1
Total Price: USD $19.76
Unit Price: USD $19.761494
≥1 USD $19.761494
≥10 USD $18.642929
≥100 USD $17.587659
≥500 USD $16.592135
≥1000 USD $15.652957
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series PowerMESH?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 11A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STW11N
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 190W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 190W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 800m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time 13ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 23 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.8Ohm
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 44A
Avalanche Energy Rating (Eas) 500 mJ
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