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IRF540
STMicroelectronicsRoHS
/
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
STripFET? II Tube Through Hole N-Channel Mosfet Transistor 22A Tc 33A 85W 20ns
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Inventory: 7406
Minimum: 1
Total Price: USD $0.81
Unit Price: USD $0.8056
≥1 USD $0.8056
≥10 USD $0.6612
≥100 USD $0.6403
≥500 USD $0.62035
≥1000 USD $0.59945
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series STripFET? II
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 22A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IRF5
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Voltage 100V
Power Dissipation-Max 85W Tc
Element Configuration Single
Current 33A
Operating Mode ENHANCEMENT MODE
Power Dissipation 85W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 77m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 25V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Rise Time 45ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 22A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.077Ohm
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 220 mJ
Turn Off Time-Max (toff) 230ns
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
No data
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