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IRF640
STMicroelectronicsRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 18A TO-220
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Inventory: 9577
Minimum: 1
Total Price: USD $0.67
Unit Price: USD $0.67165
≥1 USD $0.67165
≥10 USD $0.551
≥100 USD $0.5339
≥500 USD $0.5168
≥1000 USD $0.4997
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series MESH OVERLAY?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 18A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IRF6
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1560pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Rise Time 27 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 18A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 72A
Avalanche Energy Rating (Eas) 280 mJ
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