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IRF820
STMicroelectronicsRoHS
/
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
PowerMESH? II Tube Through Hole N-Channel Mosfet Transistor 4A Tc 4A 80W 13ns
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Inventory: 1574
Minimum: 1
Total Price: USD $0.81
Unit Price: USD $0.8056
≥1 USD $0.8056
≥10 USD $0.6612
≥100 USD $0.6403
≥500 USD $0.62035
≥1000 USD $0.59945
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series PowerMESH? II
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH VOLTAGE
Subcategory FET General Purpose Power
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 2.5A
Base Part Number IRF8
Pin Count 3
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 80W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 80W
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 315pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 13ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 13 ns
Continuous Drain Current (ID) 4A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 3Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 12A
Avalanche Energy Rating (Eas) 210 mJ
Feedback Cap-Max (Crss) 50 pF
Turn Off Time-Max (toff) 245ns
Turn On Time-Max (ton) 137ns
Compliance
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
No data
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