Welcome to AAA CHIPS! ｜ info@3achips.com
- English
Account & Orders
New Account? Start here
IRF830
STMicroelectronicsRoHS
/
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
PowerMESH? Tube Through Hole N-Channel Mosfet Transistor 4.5A Tc 4.5A 100W 5ns
PDF
/
Favorite
Payment Methods:
Delivery Services:
Pricing & Ordering
Inventory: 7613
Minimum: 1
Total Price: USD $0.24
Unit Price: USD $0.236051
≥1 USD $0.236051
≥10 USD $0.22268
≥100 USD $0.210073
≥500 USD $0.198186
≥1000 USD $0.186974
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series PowerMESH?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH VOLTAGE, FAST SWITCHING
Subcategory FET General Purpose Power
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 4.5A
Base Part Number IRF8
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 100W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 100W
Turn On Delay Time 11.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 610pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Continuous Drain Current (ID) 4.5A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 18A
Avalanche Energy Rating (Eas) 290 mJ
Feedback Cap-Max (Crss) 55 pF
Turn On Time-Max (ton) 102ns
Compliance
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
No data
Recommended For You