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IXTQ82N25P
IXYSRoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 250V 82A TO-3P
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Inventory: 5850
Minimum: 1
Total Price: USD $3.35
Unit Price: USD $3.34556
≥1 USD $3.34556
≥10 USD $3.15619
≥100 USD $2.97754
≥500 USD $2.809
≥1000 USD $2.65
≥3000 USD $2.5
Technical Details
Supply Chain
Factory Lead Time 24 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Series PolarHT?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 500W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 41A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 82A Tc
Gate Charge (Qg) (Max) @ Vgs 142nC @ 10V
Rise Time 20 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 78 ns
Continuous Drain Current (ID) 82A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 250V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 1000 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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