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IPB80N04S306ATMA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) TO-263
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Inventory: 2860
Minimum: 1
Total Price: USD $4.03
Unit Price: USD $4.028
≥1 USD $4.028
≥10 USD $3.30505
≥100 USD $3.2015
≥500 USD $3.09795
≥1000 USD $2.99535
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series OptiMOS?
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 100W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.4m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 52μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Rise Time 10 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain-source On Resistance-Max 0.0054Ohm
Avalanche Energy Rating (Eas) 125 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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