Packaging Tube
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 27mOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Max Power Dissipation 110W
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Current Rating 42A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 5V
Rise Time 84 ns
Fall Time (Typ) 15 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 42A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 20A
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Nominal Vgs 2 V