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IPB80N06S4L05ATMA2
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 80A TO263-3
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Inventory: 7811
Minimum: 1
Total Price: USD $6.74
Unit Price: USD $6.737275
≥1 USD $6.737275
≥10 USD $6.355911
≥100 USD $5.996152
≥500 USD $5.656739
≥1000 USD $5.336546
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101, OptiMOS?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 107W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 107W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.1m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2.2V @ 60μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 8180pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.0048Ohm
Drain to Source Breakdown Voltage 60V
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.946308g
Transistor Element Material SILICON
Dimensions
Height 4.4mm
Length 10mm
Width 9.25mm
Compliance
RoHS Status ROHS3 Compliant
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