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IRFD9010
Vishay SiliconixRoHS
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Package 4-DIP (0.300, 7.62mm)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 50V 1.1A 4-DIP
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Inventory: 4865
Minimum: 1
Total Price: USD $7.48
Unit Price: USD $7.4822
≥1 USD $7.4822
≥10 USD $6.13985
≥100 USD $5.94795
≥500 USD $5.75605
≥1000 USD $5.56415
Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
Voltage - Rated DC -50V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Current Rating -1.1A
Pin Count 4
JESD-30 Code R-XDIP-T3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6.1 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 500m Ω @ 580mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.1A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 47 ns
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 39 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 1.1A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.5Ohm
Drain to Source Breakdown Voltage -50V
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Weight 639.990485mg
Transistor Element Material SILICON
Dimensions
Height 3.37mm
Length 5mm
Width 6.29mm
Compliance
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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