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IPP80N06S208AKSA2
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 80A TO220-3
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Inventory: 9740
Minimum: 1
Total Price: USD $1
Unit Price: USD $0.99922
≥1 USD $0.99922
≥10 USD $0.942663
≥100 USD $0.889303
≥500 USD $0.838967
≥1000 USD $0.791477
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Compliance
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series OptiMOS?
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Voltage 55V
Power Dissipation-Max 215W Tc
Element Configuration Single
Current 80A
Operating Mode ENHANCEMENT MODE
Power Dissipation 215W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8m Ω @ 58A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2860pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 55V
Drain-source On Resistance-Max 0.008Ohm
Drain to Source Breakdown Voltage 55V
Avalanche Energy Rating (Eas) 450 mJ
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