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IPP80N06S2L11AKSA2
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 80A TO220-3
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Inventory: 5867
Minimum: 1
Total Price: USD $1.34
Unit Price: USD $1.34235
≥1 USD $1.34235
≥10 USD $1.102
≥100 USD $1.0678
≥500 USD $1.03265
≥1000 USD $0.99845
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series OptiMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 158W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10.7m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 2V @ 93μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2075pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time 32ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 55V
Drain-source On Resistance-Max 0.0147Ohm
Avalanche Energy Rating (Eas) 280 mJ
Alternative Model
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