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IPB80N06S209ATMA2
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 80A TO263-3
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Inventory: 7870
Minimum: 1
Total Price: USD $0.7
Unit Price: USD $0.69544
≥1 USD $0.69544
≥10 USD $0.656067
≥100 USD $0.618934
≥500 USD $0.583898
≥1000 USD $0.550848
Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Physical
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series OptiMOS?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 190W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.8m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 125μA
Input Capacitance (Ciss) (Max) @ Vds 2360pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 80A
Drain-source On Resistance-Max 0.0088Ohm
Pulsed Drain Current-Max (IDM) 320A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 370 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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