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SI7454DP-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage PowerPAK? SO-8
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 5A PPAK SO-8
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Inventory: 2035
Minimum: 1
Total Price: USD $0.69
Unit Price: USD $0.6916
≥1 USD $0.6916
≥10 USD $0.5681
≥100 USD $0.55005
≥500 USD $0.532
≥1000 USD $0.5149
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Dimensions
Height 1.04mm
Length 4.9mm
Width 5.89mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 33MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.9W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.9W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 34m Ω @ 7.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5A Ta
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 10 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 7.8A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 30A
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