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IPB60R280P6ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH TO263-3
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Inventory: 1935
Minimum: 1
Total Price: USD $2.15
Unit Price: USD $2.14795
≥1 USD $2.14795
≥10 USD $1.7632
≥100 USD $1.7081
≥500 USD $1.653
≥1000 USD $1.5979

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS? P6
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 104W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 280m Ω @ 5.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 430μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 100V
Current - Continuous Drain (Id) @ 25°C 13.8A Tc
Gate Charge (Qg) (Max) @ Vgs 25.5nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 13.8A
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.28Ohm
Pulsed Drain Current-Max (IDM) 39A
Avalanche Energy Rating (Eas) 285 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

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