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IRLR8726TRLPBF
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 86A DPAK
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Inventory: 9583
Minimum: 5
Total Price: USD $0.81
Unit Price: USD $0.1615
≥5 USD $0.1615
≥50 USD $0.133
≥150 USD $0.12825
≥500 USD $0.12445
≥3000 USD $0.12065
≥6000 USD $0.10735
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Dimensions
Height 2.26mm
Length 6.7056mm
Width 6.22mm
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET?
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 75W Tc
Element Configuration Single
Power Dissipation 75W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 15V
Current - Continuous Drain (Id) @ 25°C 86A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 4.5V
Rise Time 49ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 86A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Input Capacitance 2.15nF
Drain to Source Resistance 5.8mOhm
Rds On Max 5.8 mΩ
Compliance
RoHS Status ROHS3 Compliant
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