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PMPB13XNE,115
Nexperia USA Inc.RoHS 
RoHS compliant
RoHS compliantPackage 6-UDFN Exposed Pad
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
PMPB13XNE - 30 V, single N-channel Trench MOSFET
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Inventory: 2799
Minimum: 1
Total Price: USD $0.38
Unit Price: USD $0.384465
≥1 USD $0.384465
≥10 USD $0.362707
≥100 USD $0.342163
≥500 USD $0.322797
≥1000 USD $0.304527
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Pin Count 6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.7W Ta 12.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 8A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2195pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8A Ta
Gate Charge (Qg) (Max) @ Vgs 36nC @ 4.5V
Rise Time 30ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 49 ns
Turn-Off Delay Time 54 ns
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 650mV
Max Dual Supply Voltage 30V
Drain Current-Max (Abs) (ID) 8A
Pulsed Drain Current-Max (IDM) 32A
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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