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NTD4813NHT4G
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 40A DPAK
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Inventory: 3148
Minimum: 1
Total Price: USD $30.45
Unit Price: USD $30.4513
≥1 USD $30.4513
≥10 USD $24.98595
≥100 USD $24.20505
≥500 USD $23.42415
≥1000 USD $22.64325
Technical Details
Supply Chain
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 hours ago)
Physical
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 1.27W Ta 35.3W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.94W
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 940pF @ 12V
Current - Continuous Drain (Id) @ 25°C 7.6A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Rise Time 16.1ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Fall Time (Typ) 16.1 ns
Turn-Off Delay Time 17.2 ns
Continuous Drain Current (ID) 9A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0259Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 90A
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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