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AON6354
Alpha & Omega Semiconductor Inc.RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerSMD, Flat Leads
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CHANNEL 30V 83A 8DFN
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Pricing & Ordering
Inventory: 2700
Minimum: 5
Total Price: USD $2.56
Unit Price: USD $0.51205
≥5 USD $0.51205
≥50 USD $0.4199
≥150 USD $0.4066
≥500 USD $0.39425
Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mounting Type Surface Mount
Package / Case 8-PowerSMD, Flat Leads
Surface Mount YES
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 36W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.3m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1330pF @ 15V
Current - Continuous Drain (Id) @ 25°C 83A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 83A
Drain-source On Resistance-Max 0.0052Ohm
Pulsed Drain Current-Max (IDM) 205A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 20 mJ
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