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AONR21357
Alpha & Omega Semiconductor Inc.RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 30V 3X3 8DFN EP
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Inventory: 1235
Minimum: 5
Total Price: USD $2.35
Unit Price: USD $0.47025
≥5 USD $0.47025
≥50 USD $0.3857
≥150 USD $0.3743
≥500 USD $0.36195
≥500 USD $0.3496
≥1000 USD $0.3135
Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 5W Ta 30W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2830pF @ 15V
Current - Continuous Drain (Id) @ 25°C 21A Ta 34A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±25V
Drain Current-Max (Abs) (ID) 34A
Drain-source On Resistance-Max 0.0078Ohm
Pulsed Drain Current-Max (IDM) 136A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 76 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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