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IPD50R650CEAUMA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
CONSUMER
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Inventory: 3038
Minimum: 1
Total Price: USD $2.34
Unit Price: USD $2.343233
≥1 USD $2.343233
≥10 USD $2.210596
≥100 USD $2.08546
≥500 USD $1.967416
≥1000 USD $1.856059
Technical Details
Physical
Mount Surface Mount
Package / Case TO-252-3
Number of Pins 3
Weight 3.949996g
Compliance
RoHS Status ROHS3 Compliant
Technical
Packaging Tape & Reel (TR)
Published 2008
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 47W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 47W
Case Connection DRAIN
Turn On Delay Time 6 ns
Transistor Application SWITCHING
Rise Time 5ns
Drain to Source Voltage (Vdss) 500V
Polarity/Channel Type N-CHANNEL
Fall Time (Typ) 13 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 6.1A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
Input Capacitance 342pF
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 650mOhm
Rds On Max 650 mΩ
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