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IRF710SPBF
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 400V 2A D2PAK
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Inventory: 4536
Minimum: 1
Total Price: USD $25.9
Unit Price: USD $25.9027
≥1 USD $25.9027
≥10 USD $21.2534
≥100 USD $20.58935
≥500 USD $19.9253
≥1000 USD $19.26125
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Weight 1.437803g
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 3.6Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.1W Ta 36W Tc
Element Configuration Single
Power Dissipation 3.1W
Turn On Delay Time 8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.6Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 170pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 9.9ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 2A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 400V
Input Capacitance 170pF
Drain to Source Resistance 3.6Ohm
Rds On Max 3.6 Ω
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 4.83mm
Length 10.67mm
Width 9.65mm
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