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IRF9Z20PBF
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 50V 9.7A TO-220AB
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Inventory: 4393
Minimum: 1
Total Price: USD $4.21
Unit Price: USD $4.205429
≥1 USD $4.205429
≥10 USD $3.967384
≥100 USD $3.742817
≥500 USD $3.530955
≥1000 USD $3.331089
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 280mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 40W Tc
Element Configuration Single
Power Dissipation 40W
Turn On Delay Time 8.2 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 280mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 480pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.7A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Rise Time 57ns
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 9.7A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Input Capacitance 480pF
Drain to Source Resistance 280mOhm
Rds On Max 280 mΩ
Nominal Vgs -4 V
Dimensions
Height 9.01mm
Length 10.41mm
Width 4.7mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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