Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Series HiPerFET?, PolarHT?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 22A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 350W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 350W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 270m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 2630pF @ 25V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 22A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.27Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 55A
Avalanche Energy Rating (Eas) 750 mJ