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SPD03N60C3ATMA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 3.2A DPAK
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Inventory: 7291
Minimum: 1
Total Price: USD $0.58
Unit Price: USD $0.58162
≥1 USD $0.58162
≥10 USD $0.548703
≥100 USD $0.517647
≥500 USD $0.488341
≥1000 USD $0.460704
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package PG-TO252-3-1
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 650V
Technology MOSFET (Metal Oxide)
Current Rating 3.2A
Power Dissipation-Max 38W Tc
Element Configuration Single
Power Dissipation 38W
Turn On Delay Time 7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 3.9V @ 135μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.2A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 3ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 64 ns
Continuous Drain Current (ID) 3.2A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Input Capacitance 400pF
Drain to Source Resistance 1.4Ohm
Rds On Max 1.4 Ω
Nominal Vgs 3 V
Dimensions
Height 2.413mm
Length 6.73mm
Width 6.223mm
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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