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BSC020N03LSGATMA2

Infineon Technologies
RoHS
RoHS RoHS compliant
Package /
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description OPTIMOS 3 POWER-MOSFET
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Inventory: 3168
Minimum: 1
Total Price: USD $0.68
Unit Price: USD $0.677199
≥1 USD $0.677199
≥10 USD $0.638869
≥100 USD $0.602703
≥500 USD $0.568593
≥1000 USD $0.536406

Technical Details

Supply Chain

Factory Lead Time 26 Weeks

Physical

Surface Mount YES
Transistor Element Material SILICON

Technical

Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 28A
Drain-source On Resistance-Max 0.0029Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 180 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR

Compliance

RoHS Status ROHS3 Compliant

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