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SI2312CDS-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 6A SOT-23
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Inventory: 56
Minimum: 1
Total Price: USD $0.6
Unit Price: USD $0.597878
≥1 USD $0.597878
≥10 USD $0.564039
≥100 USD $0.53211
≥500 USD $0.501986
≥1000 USD $0.473577
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Dimensions
Height 1.12mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 31.8MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.25W Ta 2.1W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 31.8m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 865pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V
Rise Time 17 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 6A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 20V
Max Junction Temperature (Tj) 150°C
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
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