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IRFS31N20DTRLP
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 31A D2PAK
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Inventory: 6769
Minimum: 1
Total Price: USD $5.37
Unit Price: USD $5.37035
≥1 USD $5.37035
≥10 USD $4.4061
≥100 USD $4.26835
≥500 USD $4.1306
≥1000 USD $3.99285
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2000
Series HEXFET?
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 82mOhm
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 31A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.1W Ta 200W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 82m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2370pF @ 25V
Current - Continuous Drain (Id) @ 25°C 31A Tc
Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V
Rise Time 38 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 31A
Threshold Voltage 5.5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 200V
Dual Supply Voltage 200V
Avalanche Energy Rating (Eas) 420 mJ
Nominal Vgs 5.5 V
Dimensions
Height 4.826mm
Length 10.668mm
Width 9.65mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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