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BSC079N03SG

Infineon Technologies
RoHS
/
Package 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 40A TDSON-8
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Inventory: 8811
Minimum: 1
Total Price: USD $0.34
Unit Price: USD $0.34105
≥1 USD $0.34105
≥10 USD $0.2793
≥100 USD $0.27075
≥500 USD $0.2622
≥1000 USD $0.25365

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series OptiMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 40A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 60W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.8W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.9m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 2V @ 30μA
Input Capacitance (Ciss) (Max) @ Vds 2230pF @ 15V
Current - Continuous Drain (Id) @ 25°C 14.6A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V
Rise Time 4.2 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.4 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 14.6A
Drain-source On Resistance-Max 0.0116Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 160A
Avalanche Energy Rating (Eas) 120 mJ

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

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