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IPA65R1K5CEXKSA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V TO220-3
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Inventory: 2628
Minimum: 1
Total Price: USD $0.32
Unit Price: USD $0.324097
≥1 USD $0.324097
≥10 USD $0.305748
≥100 USD $0.288443
≥500 USD $0.272118
≥1000 USD $0.256715
Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2013
Series CoolMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 30W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 130μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 100V
Current - Continuous Drain (Id) @ 25°C 5.2A Tc
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 5.2A
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 650V
Pulsed Drain Current-Max (IDM) 8.3A
Avalanche Energy Rating (Eas) 26 mJ
FET Feature Super Junction
Alternative Model
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