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SI4431BDY-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET 30V 7.5A 2.5W 30mohm @ 10V
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Inventory: 6480
Minimum: 1
Total Price: USD $0.24
Unit Price: USD $0.2356
≥1 USD $0.2356
≥10 USD $0.19285
≥100 USD $0.18715
≥500 USD $0.18145
≥1000 USD $0.1748
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 30m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5.7A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Rise Time 10 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) -5.7A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.03Ohm
DS Breakdown Voltage-Min 30V
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
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