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NCV8440ASTT3G
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 59V 2.6A SOT-223-4
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Inventory: 5525
Minimum: 1
Total Price: USD $0.5
Unit Price: USD $0.4978
≥1 USD $0.4978
≥10 USD $0.4085
≥100 USD $0.39615
≥500 USD $0.38285
≥1000 USD $0.3705
Technical Details
Supply Chain
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Physical
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.69W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 2.6A, 10V
Vgs(th) (Max) @ Id 1.9V @ 100μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 155pF @ 35V
Current - Continuous Drain (Id) @ 25°C 2.6A Ta
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V
Drain to Source Voltage (Vdss) 59V
Drive Voltage (Max Rds On,Min Rds On) 3.5V 10V
Vgs (Max) ±15V
Continuous Drain Current (ID) 2.6A
Gate to Source Voltage (Vgs) 15V
Drain-source On Resistance-Max 0.11Ohm
Pulsed Drain Current-Max (IDM) 10A
DS Breakdown Voltage-Min 52V
Avalanche Energy Rating (Eas) 110 mJ
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