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IPD50N08S413ATMA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 80V 50A
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Inventory: 7252
Minimum: 1
Total Price: USD $8.3
Unit Price: USD $8.2954
≥1 USD $8.2954
≥10 USD $6.80675
≥100 USD $6.59395
≥500 USD $6.38115
≥1000 USD $6.16835
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Compliance
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101, OptiMOS?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 72W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 72W
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13.2m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 33μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1711pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 76 mJ
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