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IPD65R1K4C6ATMA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3
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Inventory: 2249
Minimum: 1
Total Price: USD $0.67
Unit Price: USD $0.66564
≥1 USD $0.66564
≥200 USD $0.257328
≥500 USD $0.248138
≥1000 USD $0.244199
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS? C6
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 28W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 100V
Current - Continuous Drain (Id) @ 25°C 3.2A Tc
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Compliance
RoHS Status ROHS3 Compliant
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