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FQP27N25

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 250V 25.5A TO-220
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Inventory: 2371
Minimum: 1
Total Price: USD $0.64
Unit Price: USD $0.644996
≥1 USD $0.644996
≥10 USD $0.608486
≥100 USD $0.574044
≥500 USD $0.541554
≥1000 USD $0.510887

Technical Details

Supply Chain

Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON

Dimensions

Height 9.4mm
Length 10.1mm
Width 4.7mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 250V
Technology MOSFET (Metal Oxide)
Current Rating 25.5A
Number of Elements 1
Power Dissipation-Max 180W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 180W
Turn On Delay Time 32 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 12.75A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 25.5A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Rise Time 270 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 120 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 25.5A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 250V
Avalanche Energy Rating (Eas) 600 mJ
Nominal Vgs 5 V

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