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FDMS8570SDC
ON SemiconductorRoHS
/
Package 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
FAIRCHILD SEMICONDUCTOR FDMS8570SDC MOSFET Transistor, N Channel, 60 A, 25 V, 0.0021 ohm, 10 V, 1.5 V
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Inventory: 1478
Minimum: 1
Total Price: USD $1.91
Unit Price: USD $1.91235
≥1 USD $1.91235
≥10 USD $1.5694
≥100 USD $1.52
≥500 USD $1.47155
≥1000 USD $1.42215
Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 90mg
Transistor Element Material SILICON
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel?
Published 2017
Series PowerTrench?, SyncFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 3.3W Ta 59W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 59W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.8m Ω @ 28A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2825pF @ 13V
Current - Continuous Drain (Id) @ 25°C 28A Ta 60A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Rise Time 4 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 60A
Threshold Voltage 1.5V
JEDEC-95 Code MO-240AA
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 100A
Avalanche Energy Rating (Eas) 45 mJ
FET Feature Schottky Diode (Body)
Alternative Model
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