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RSS040P03FU6TB
ROHM SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 30V 4A 8SOIC
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Inventory: 6999
Minimum: 1
Total Price: USD $5.55
Unit Price: USD $5.54895
≥1 USD $5.54895
≥10 USD $4.55335
≥100 USD $4.41085
≥500 USD $4.2693
≥1000 USD $4.1268
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SOP
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 106MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2W Ta
Power Dissipation 2W
Turn On Delay Time 12 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 58mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 8nC @ 5V
Rise Time 25ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 4A
Threshold Voltage -2.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Dual Supply Voltage -30V
Input Capacitance 800pF
Drain to Source Resistance 58mOhm
Rds On Max 58 mΩ
Nominal Vgs -2.5 V
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