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NDF05N50ZG
ON SemiconductorRoHS
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Package TO-220-3 Full Pack
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Tube Through Hole N-Channel Single Mosfet Transistor 5.5A Tc 5A 28W 14ns
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Inventory: 6474
Minimum: 1
Total Price: USD $0.4
Unit Price: USD $0.40399
≥1 USD $0.40399
≥10 USD $0.38113
≥100 USD $0.35955
≥500 USD $0.3392
≥1000 USD $0.32
≥3000 USD $0.30189
Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Physical
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.5Ohm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 30W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 28W
Case Connection ISOLATED
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.5 Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 632pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.5A Tc
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 5A
Threshold Voltage 4.5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 20A
Nominal Vgs 4.5 V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Dimensions
Height 16.12mm
Length 10.63mm
Width 4.9mm
Alternative Model
No data
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