Packaging Cut Tape (CT)
Published 2013
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 31MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 3.6W
Turn On Delay Time 9.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 31mOhm @ 34A, 10V
Vgs(th) (Max) @ Id 5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 50V
Current - Continuous Drain (Id) @ 25°C 10A Ta 56A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time 9.7ns
Drain to Source Voltage (Vdss) 150V
Fall Time (Typ) 3.4 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 56A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Input Capacitance 2.3nF
Recovery Time 78 ns
Drain to Source Resistance 31mOhm
Rds On Max 31 mΩ
Nominal Vgs 5 V