Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2008
Series CoolMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Additional Feature HIGH VOLTAGE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 83W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 380m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 320μA
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 100V
Current - Continuous Drain (Id) @ 25°C 10.6A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 10.6A
Drain-source On Resistance-Max 0.38Ohm
Pulsed Drain Current-Max (IDM) 30A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 210 mJ