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BSS83PL6327HTSA1
Infineon TechnologiesRoHS
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Package TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 60V 330MA SOT-23
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Inventory: 7895
Minimum: 1
Total Price: USD $0.13
Unit Price: USD $0.1349
≥1 USD $0.1349
≥10 USD $0.1102
≥100 USD $0.10735
≥500 USD $0.10355
≥1000 USD $0.1007
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23-3
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1999
Series SIPMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 360mW Ta
Power Dissipation 360mW
FET Type P-Channel
Rds On (Max) @ Id, Vgs 2Ohm @ 330mA, 10V
Vgs(th) (Max) @ Id 2V @ 80μA
Input Capacitance (Ciss) (Max) @ Vds 78pF @ 25V
Current - Continuous Drain (Id) @ 25°C 330mA Ta
Gate Charge (Qg) (Max) @ Vgs 3.57nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 330mA
Gate to Source Voltage (Vgs) 20V
Input Capacitance 78pF
Rds On Max 2 Ω
Compliance
RoHS Status RoHS Compliant
Alternative Model
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