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NTR2101PT1
ON SemiconductorRoHS
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Package TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 8V 3.7A SOT-23
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Inventory: 3376
Minimum: 1
Total Price: USD $0.58
Unit Price: USD $0.5814
≥1 USD $0.5814
≥10 USD $0.4769
≥100 USD $0.4617
≥500 USD $0.44745
≥1000 USD $0.43225
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Voltage - Rated DC -8V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating -3.7A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 960mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 960mW
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 52m Ω @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1173pF @ 4V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Rise Time 15.75ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 15.75 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) -3.7A
JEDEC-95 Code TO-236AB
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.052Ohm
Drain to Source Breakdown Voltage -8V
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
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