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NTMS4706NR2G
ON SemiconductorRoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Tape & Reel (TR) Surface Mount N-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 6.4A Ta 6.4A 1.5W 4ns
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Inventory: 1378
Minimum: 1
Total Price: USD $2.48
Unit Price: USD $2.4757
≥1 USD $2.4757
≥10 USD $2.03205
≥100 USD $1.9684
≥500 USD $1.90475
≥1000 USD $1.8411
Technical Details
Supply Chain
Lifecycle Status OBSOLETE (Last Updated: 1 day ago)
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 8.6A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 830mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 10.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 24V
Current - Continuous Drain (Id) @ 25°C 6.4A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Rise Time 4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 6.4A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.012Ohm
Drain to Source Breakdown Voltage 30V
Alternative Model
No data
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