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NTMFS4708NT1G
ON SemiconductorRoHS
/
Package 8-PowerTDFN, 5 Leads
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Tape & Reel (TR) Surface Mount N-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 7.8A Ta 7.8A 2.2W 16ns
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Inventory: 3715
Minimum: 1
Total Price: USD $8.41
Unit Price: USD $8.4113
≥1 USD $8.4113
≥10 USD $6.90175
≥100 USD $6.6861
≥500 USD $6.47045
≥1000 USD $6.2548
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 11.5A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.2W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 11.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 970pF @ 24V
Current - Continuous Drain (Id) @ 25°C 7.8A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Rise Time 4.3ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 7.8A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.01Ohm
Drain to Source Breakdown Voltage 30V
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
No data
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