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NTD20N06-1G
ON SemiconductorRoHS
/
Package TO-251-3 Short Leads, IPak, TO-251AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Tube Through Hole N-Channel Single Mosfet Transistor 20A Ta 20A 60W 37.1ns
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Inventory: 3009
Minimum: 1
Total Price: USD $0.36
Unit Price: USD $0.361944
≥1 USD $0.361944
≥10 USD $0.341454
≥100 USD $0.322126
≥500 USD $0.303895
≥1000 USD $0.286691
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material SILICON
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2007
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Current Rating 20A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.88W Ta 60W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 60W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 46m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1015pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 60.5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 37.1 ns
Turn-Off Delay Time 27.1 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.046Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 60A
Avalanche Energy Rating (Eas) 170 mJ
Alternative Model
No data
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